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1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466

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1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466

Brand Name : Infineon

Model Number : FZ900R12KE4HOSA1

Place of Origin : Germany

MOQ : 1PCS

Price : Bargain

Payment Terms : L/C, T/T

Supply Ability : 500 PCS+48hours

Delivery Time : 48hours

Packaging Details : Tray

Infineon : FZ900R12KE4HOSA1

Configuration : Single

Collector-emitter maximum voltage VCEO : 1.2 kV

Collector-emitter saturation voltage : 1.75 V

Continuous collector current at 25C : 900 A

Gate-emitter leakage current : 400 nA

Pd-power dissipation : 4300 W

Minimum working temperature : -40℃

Maximum working temperature : +150℃

Packaging : 10 PCS

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FZ900R12KE4HOSA1 SP000524466 Infineon IGBT module 1200V 900A

FZ900R12KE4

Manufacturer: Infineon
Product Type: IGBT Modules
Configuration: Single
Collector-emitter maximum voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 1.75 V
Continuous collector current at 25 C: 900 A
Gate-emitter leakage current: 400 nA
Pd-power dissipation: 4300 W
Minimum working temperature: - 40 C
Maximum working temperature: + 150 C
Package: Tray
Gate/emitter maximum voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
Series: Trenchstop IGBT4 - E4
Packing Quantity: 10 PCS
Subcategory: IGBTs
Technology: Si

1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP0005244661200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466


Product Tags:

1200V IGBT Modules

      

900A IGBT Modules

      

FZ900R12KE4HOSA1

      
Quality 1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466 for sale

1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466 Images

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